| PART |
Description |
Maker |
| BS62LV1600ECG70 BS62LV1600ECG55 BS62LV1600FCP55 BS |
Very Low Power CMOS SRAM 2M X 8 bit 极低功耗CMOS SRAMx 8
Very Low Power CMOS SRAM 2M X 8 bit 2M X 8 STANDARD SRAM, 55 ns, PBGA48
Very Low Power CMOS SRAM 2M X 8 bit 2M X 8 STANDARD SRAM, 55 ns, PDSO44
|
BRILLIANCE SEMICONDUCTOR INC
BRILLIANCE SEMICONDUCTOR, Inc.
Brilliance Semiconducto...
|
| BS62LV8001 BS62LV8001EI BS62LV8001EIP55 BS62LV8001 |
Very Low Power/Voltage CMOS SRAM 1M X 8 bit
Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 70 ns, PBGA48
Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 55 ns, PBGA48
Aluminum Electrolytic Capacitor; Capacitor Type:High Temperature; Voltage Rating:25VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to C; Capacitance:47uF RoHS Compliant: Yes
From old datasheet system
Asynchronous 8M(1Mx8) bits Static RAM
|
Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| IDT6116LA IDT6116SA IDT6116SA20TDB IDT6116SA20SO I |
From old datasheet system
2K X 8 STANDARD SRAM, 35 ns, PDSO24 0.300 INCH, SOJ-24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 45 ns, PDSO24
2K X 8 STANDARD SRAM, 35 ns, PDSO24 0.300 INCH, SOIC-24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 35 ns, PDSO24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 45 ns, PDIP24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 25 ns, PDIP24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 20 ns, PDIP24
|
http://
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| AS7C31025B AS7C31025B-20TJIN AS7C31025B-10JC AS7C3 |
SRAM - 3.3V Fast Asynchronous
128 x 64 pixel format, LED or EL Backlight available
8-Bit Parallel-Load Shift Registers 16-TVSOP -40 to 85
8-Bit Parallel-Load Shift Registers 16-SSOP -40 to 85
8-Bit Parallel-Load Shift Registers 16-SOIC -40 to 85
3.3V 128K X 8 CMOS SRAM (Center power and ground) 128K X 8 STANDARD SRAM, 15 ns, PDSO32
3.3V 128K X 8 CMOS SRAM (Center power and ground) 128K X 8 STANDARD SRAM, 10 ns, PDSO32
|
Alliance Semiconductor ...
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
|
| HY6264 HY6264-10 HY6264-12 HY6264-15 HY6264-70 HY6 |
8KX8-Bit CMOS SRAM
x8 SRAM 8K X 8 STANDARD SRAM, 70 ns, PDSO28
x8 SRAM 8K X 8 STANDARD SRAM, 70 ns, PDIP28
x8 SRAM 8K X 8 STANDARD SRAM, 85 ns, PDSO28
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| UT62L12816 UT62L12816BS-55LI UT62L12816BS-55LLI UT |
128K x 16 BIT LOW POWER CMOS SRAM 128K的16位低功耗CMOS SRAM
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| BS616UV2019AI85 BS616UV2019TI85 |
Ultra Low Power CMOS SRAM 128K X 16 bit 超低功耗CMOS SRAM 128K的16
|
BRILLIANCE SEMICONDUCTOR, Inc.
|
| M6MGB_T166S2BWG M6MGB M6MGT166S2BWG E99007_A |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY &
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP
From old datasheet system
|
Mitsubishi
|
| IDT6167 IDT6167LA IDT6167LA100D IDT6167LA100DB IDT |
CMOS STATIC RAM 16K (16K x 1-BIT) 16K的的CMOS静态RAM6K的1位）
CABLE SMA/BNC 24 RG-142 16K的的CMOS静态RAM6K的1位）
Quad Enhanced JFET Precision Operational Amplifier 14-SOIC -40 to 85 16K的的CMOS静态RAM6K的1位）
Enhanced-JFET Precision Dual Operational Amplifier 8-PDIP -40 to 85 16K的的CMOS静态RAM6K的1位）
CMOS STATIC RAM 16K (16K x 1-BIT) 16K X 1 STANDARD SRAM, 25 ns, PDSO20
CMOS STATIC RAM 16K (16K x 1-BIT) 16K X 1 STANDARD SRAM, 25 ns, CDIP20
CMOS STATIC RAM 16K (16K x 1-BIT) 16K X 1 STANDARD SRAM, 35 ns, CDIP20
CMOS STATIC RAM 16K (16K x 1-BIT) 16K X 1 STANDARD SRAM, 15 ns, CDIP20
CMOS STATIC RAM 16K (16K x 1-BIT) 16K X 1 STANDARD SRAM, 35 ns, PDIP20
CMOS STATIC RAM 16K (16K x 1-BIT) 16K X 1 STANDARD SRAM, 15 ns, PDIP20
CMOS STATIC RAM 16K (16K x 1-BIT) 16K X 1 STANDARD SRAM, 45 ns, CDIP20
CABLE SMA/BNC 36 RG-142
Enhanced-JFET Precision Dual Operational Amplifier 8-SOIC 0 to 70
Quad Enhanced JFET Precision Operational Amplifier 14-SOIC 0 to 70
16K X 1 STANDARD SRAM, 70 ns, PDSO20
|
Integrated Device Techn...
INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| AM29LV102B AM29LV102BB-120EC AM29LV102BB-120ECB AM |
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory
IC SMT SRAM 128K X 8 70NS 5V SOP-32
SRAM; Memory Type:Asynchronous SRAM; Memory Size:1MB; Memory Configuration:64K x 16; Access Time, Tacc:10ns; Package/Case:44-TSOP-II; Operating Temp. Max:70 C; Operating Temp. Min:0 C RoHS Compliant: Yes
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 256K X 8 FLASH 3V PROM, 120 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 2兆位256亩8位）.0伏的CMOS只，引导扇区32引脚闪存
|
AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
